Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf
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journal contribution
posted on 2022-12-13, 16:04authored byTianyi Tang, wenkang zhan, Chao SHEN, manyang li, Bo XU, Zhanguo Wang, Chao Zhao
Details of the surface morphology of the GaSb epilayer based on AlSb nucleation layer with different V/III flux ratios and temperatures; GaSb epilayer grown at different temperatures; the surface morphology of the GaSb epilayer with different thickne