Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf

Tang, Tianyi; zhan, wenkang; SHEN, Chao; li, manyang; XU, Bo; Wang, Zhanguo; Zhao, Chao

doi:10.6084/m9.figshare.21641411.v2

6172649.pdf (2.54 MB)

Supplementary document for High-quality GaSb epitaxially grown on Si (001) through defects self-annihilation for CMOS-compatible near-IR light emitters - 6172649.pdf

Version 3 2022-12-19, 15:42

Version 2 2022-12-13, 16:05

Version 1 2022-12-13, 16:04

journal contribution

posted on 2022-12-13, 16:05 authored by Tianyi Tang, wenkang zhan, Chao SHEN, manyang li, Bo XU, Zhanguo Wang, Chao Zhao

Details of the surface morphology of the GaSb epilayer based on AlSb nucleation layer with different V/III flux ratios and temperatures; GaSb epilayer grown at different temperatures; the surface morphology of the GaSb epilayer with different thickne