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Enhanced p-type conductivity of hexagonal boron nitride by an efficient two-step doping strategy

Version 2 2024-07-10, 13:30
Version 1 2024-07-10, 13:29
Posted on 2024-07-10 - 13:30
The present study proposes a two-step doping strategy for achieving efficient Mg doping of h-BN, involving an additional post-annealing treatment. This approach leads to ~108-fold enhancement in conductivity of h-BN, comparing with the as-doped h-BN grown by low-pressure chemical vapor deposition. The mechanism for large enhancement in h-BN doping efficiency after post-annealing was investigated, providing the evidence that this treatment not only facilitates the nanoparticle decomposition and incorporation of Mg atoms into h-BN, but also restores its lattice defects. The efficient two-step doping strategy for p-type h-BN in this study enlightens its promising prospects for the ultraviolet optoelectronic devices.

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AUTHORS (10)

Yuang Cheng
Yang Chen
Bing Chen Lv
Zhiming Shi
Yuanyuan Yue
Yuping Jia
Ke Jiang
Xiaoyu Wei
Dabing Li
Shanli Zhang

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