High gain, low noise 1550 nm GaAsSb/AlGaAsSb
avalanche photodiodes
Posted on 2023-01-24 - 19:35
We report the demonstration of a room temperature, ultra-high gain (M=278, λ=1550 nm, V=69.5 V, T=296 K) linear mode avalanche photodiode (APD) on an InP substrate using a GaAs0.5Sb0.5/Al0.85Ga0.15As0.56Sb0.44 separate absorption charge and multiplication (SACM) heterostructure. This represents a ~10× gain improvement (M=278) over commercial, state-of-the-art InGaAs/InP based APDs (M∼30) operating at 1550 nm. The excess noise factor is extremely low (F<3) at M=70 which is even lower than Si APDs. This design gives a quantum efficiency of 5935.3% at maximum gain. This SACM APD shows an extremely low-temperature breakdown sensitivity (Cbd) of ~11.83 mV/K, which is ~10× lower than equivalent InGaAs/InP commercial APDs. This demonstration opens a pathway to realize high sensitivity receiver systems at eye-safe, infrared wavelengths (1400 - 1650 nm) for a variety of applications.
CITE THIS COLLECTION
Lee, Seunghyun; Jin, Xiao; Jung, Hyemin; Lewis, Harry; Liu, Yifan; Guo, Bingtian; et al. (2023). High gain, low noise 1550 nm GaAsSb/AlGaAsSb
avalanche photodiodes. Optica Publishing Group. Collection. https://doi.org/10.6084/m9.figshare.c.6341729.v2
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AUTHORS (10)
SL
Seunghyun Lee
XJ
Xiao Jin
HJ
Hyemin Jung
HL
Harry Lewis
YL
Yifan Liu
BG
Bingtian Guo
SK
Sri Harsha Kodati
MS
Mariah Schwartz
CG
Christoph Grein
TR
Theodore Ronningen