Schottky type GaN based UV photodetector with atomic layer deposited TiN thin film as electrodes
Posted on 13.01.2022 - 23:31
In this work, a GaN based UV photodetector with an asymmetric electrode structure was fabricated by atomic layer deposition (ALD) of TiN layers. The thickness of the TiN can be in situ monitored by a quartz crystal microbalance (QCM) and precisely controlled through the modulation of deposition cycles. During the ALD process, the periodic variation of QCM frequency was observed and correlated to the physical absorption, chemical bonding, and excessive precursors exhaust of tetrakis (dimethylamino) titanium (TDMAT) and N sources. The asymmetric TiN/GaN/TiN photodetector shows an excellent performance of photosensing with an UV-Visible rejection ratio of 173, a responsivity of 4.25 A/W, a detectivity of 1.1×1013 Jones, and fast response speeds (rise time of 69 μs and decay time of 560 μs). Moreover, the device also exhibits a high stability with only an attenuation of ~0.5% after a 360 nm light irradiation for 157 min. This result indicates the potential of TiN as a transparent contact electrode for GaN based optoelectronic devices.
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Su, longxing; Zhao, Lianqi; Chen, Sheng-Yu; Deng, Yingdong; Pu, Ruihua; Wang, Ziyu; et al. (2022): Schottky type GaN based UV photodetector with atomic layer deposited TiN thin film as electrodes. Optica Publishing Group. Collection. https://doi.org/10.6084/m9.figshare.c.5761286.v2
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